SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING

专利名称：SEMICONDUCTOR MEMORY DEVICE AND

METHOD OF FORMING THE SAME

发明人：Ying-Chiao Wang,Li-Wei Feng,Chien-Ting

Ho,Tsung-Ying Tsai

申请号：US15915026申请日：20180307

公开号：US20180277546A1公开日：20180927

专利附图：

摘要：A semiconductor memory device and a method of forming the same, thesemiconductor memory device includes a substrate, a plurality of bit lines, a gate, a

spacer layer and a first spacer. The substrate has a memory cell region and a peripheryregion, the a plurality of bit lines are disposed on the substrate, within the memory cellregion, and the gate is disposed on the substrate, within the periphery. The spacer layercovers the bit lines and a sidewall of the gate. The first spacer is disposed at two sides ofthe gate, covers on the spacer layer.

申请人：UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.

地址：Hsin-Chu City TW,Quanzhou City CN

国籍：TW,CN

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